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TGD30N40P

TRinno
Part Number TGD30N40P
Manufacturer TRinno
Description Field Stop Trench IGBT
Published Jun 17, 2016
Detailed Description TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeffi...
Datasheet PDF File TGD30N40P PDF File

TGD30N40P
TGD30N40P


Overview
TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, D-PAK C GE Device TGD30N40P Package D-PAK Packaging type Reel Marking TGD30N40P Remark RoHS Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM PD TJ TSTG TL Value 400 ±30 60 30 300 56.
8 22.
7 -55 ~ 150 -55 ~ 150 300 Notes : (1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%.
Unit V V A A A W W ℃ ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC RθJA August.
2012 : Rev0 www.
trinnotech.
com Value 2.
2 110 Unit ℃/W ℃/W 1/6 TGD30N40P Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leakage Current BVCES ICES IGES VGE = 0V, IC = 1mA VCE = 400V, VGE = 0V VCE = 0V, VGE = ±30V 400 -- -- V -- -- 100 µA -- -- ± 250 nA ON Gate – Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2 3.
1 4.
5 Collector – Emitter Saturation Voltage VCE(SAT) VGE = 15V, IC = 30A, TJ = 25 oC -- 1.
4 2.
0 VGE = 15V, IC = 30A, TJ = 125 oC -- 1.
52 -- V V V DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance CIES COES CRES VCE = 25V, VGE = 0V, f = 1MHz -- 845 -- 50 -- 23 ---- pF pF pF SWITCHING Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time...


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