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NT5CC128M8DN

Part Number	NT5CC128M8DN
Manufacturer	Nanya
Description	1Gb DDR3 SDRAM
Published	Jun 17, 2016
Detailed Description	1Gb DDR3 SDRAM NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP Feature  1.5V ± 0.075V & 1.35V -0.067/+0.1V (JED...
Datasheet	NT5CC128M8DN PDF File

Overview

1Gb DDR3 SDRAM NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP Feature  1.
5V ± 0.
075V & 1.
35V -0.
067/+0.
1V (JEDEC Standard Power Supply)  VDD= VDDQ= 1.
35V (1.
283~1.
45V ) Backward compatible to VDD= VDDQ= 1.
5V ±0.
075V Supports DDR3L devices to be backward compatible in 1.
5V applications  The timing specification of high speed bin is backward compatible with low speed bin  8 Internal memory banks (BA0- BA2)  Differential clock input (CK, )  Programmable Latency: 5, 6, 7, 8, 9, 10, 11, 12, 13, (14)  POSTED CAS ADDITIVE Programmable Additive Latency: 0, CL-1, CL-2  Programmable Sequential / Interleave Burst Type  Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control  Differential bidirectional data strobe  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)  Auto Self-Refresh  Self-Refresh Temperature  RoHS Compliance  Lead-Free and Halogen-Free  Packages: 78-Ball BGA for x8 components 96-Ball BGA for x...

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