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2SB955

Part Number	2SB955
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Jun 18, 2016
Detailed Description	isc Silicon PNP Darlington Power Transistor 2SB955 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Coll...
Datasheet	2SB955 PDF File

Overview

isc Silicon PNP Darlington Power Transistor 2SB955 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.
5V(Max)@ IC= -5A ·Complement to Type 2SD1126 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dis...

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