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MTN12N60BFP

CYStech
Part Number MTN12N60BFP
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Jun 18, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C164FP Issued Date : 2015.03.04 Revised Date : Page No. : 1/9 N-Channel Enhancem...
Datasheet PDF File MTN12N60BFP PDF File

MTN12N60BFP
MTN12N60BFP

Overview
CYStech Electronics Corp.
Spec.
No.
: C164FP Issued Date : 2015.
03.
04 Revised Date : Page No.
: 1/9 N-Channel Enhancement Mode Power MOSFET MTN12N60BFP BVDSS :600V RDS(ON) : 0.
46Ω typ.
ID : 12A Description The MTN12N60BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Ballast • Inverter Ordering Information Device MTN12N60BFP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN12N60BFP CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C164FP Issued Date : 2015.
03.
04 Revised Date : Page No.
: 2/9 Symbol Outline MTN12N60BFP TO-220FP G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Maximum Temperature for Soldering @ Lead at 0.
125 in(3.
175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature * Drain current limited by maximum junction temperature.
Symbol VDS VGS ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg Note : 1.
TJ=+25℃ to +150℃.
2.
Repetitive rating; pulse width limited by maximum ...


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