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MTN13N45E3

CYStech
Part Number MTN13N45E3
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Jun 18, 2016
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN13N45E3 Spec. No. : C718E3 Issued Date : 2009.06.0...
Datasheet PDF File MTN13N45E3 PDF File

MTN13N45E3
MTN13N45E3

Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET MTN13N45E3 Spec.
No.
: C718E3 Issued Date : 2009.
06.
05 Revised Date : Page No.
: 1/8 BVDSS : 450V RDS(ON) : 0.
55Ω ID : 13A Description The MTN13N45E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=500V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Power Factor Correction • Flat Panel Power • Full and Half Bridge Power Supplies • Two-Transistor Forward Power Supplies Symbol MTN13N45E3 Outline TO-220 G：Gate D：Drain S：Source MTN13N45E3 GDS CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C718E3 Issued Date : 2009.
06.
05 Revised Date : Page No.
: 2/8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Maximum Temperature for Soldering @ Lead at 0.
125in(3.
175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg Limits 450 ±30 13* 7.
8* 52* 570 13 16 4.
5 300 160 1.
35 -55~+150 Unit V V A A A mJ A mJ V/ns °C W W/°C °C Note : 1.
TJ=+25℃ to +150℃.
2.
Repetitive rating; pulse width limited by maximum junction temperature.
3.
ISD=13A, dI/dt<100A/μs, VDD 4.
IAS=13A, VDD=50V, L=6mH, RG=25Ω, starting TJ=+25℃.
Thermal Data Parameter Thermal Resistance, Junction-...


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