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MTN4N65BI3

CYStech
Part Number MTN4N65BI3
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Jun 18, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C990I3 Issued Date : 2016.05.26 Revised Date : Page No. : 1/10 N-Channel Enhance...
Datasheet PDF File MTN4N65BI3 PDF File

MTN4N65BI3
MTN4N65BI3

Overview
CYStech Electronics Corp.
Spec.
No.
: C990I3 Issued Date : 2016.
05.
26 Revised Date : Page No.
: 1/10 N-Channel Enhancement Mode Power MOSFET MTN4N65BI3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=2A 650V 4A 2.
4A 2Ω(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free Lead Plating and Halogen-free Package Symbol MTN4N65BI3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device MTN4N65BI3-0-UA-G Package TO-251 (RoHS compliant and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTN4N65BI3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C990I3 Issued Date : 2016.
05.
26 Revised Date : Page No.
: 2/10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.
125 in(0.
318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature *100% UIS testing in condition of VDD=50V, L=8mH, VG=10V, IL=2A, Rated VDS=650V Note : 1.
Repetitive rating; pulse width limited by maximum junction temperature.
2.
IAS=3A, VDD=50V, L=8mH, VG=10V, starting TJ=+25℃.
Symbol VDS VGS ID IDM IAS EAS EAR TL PD Tj, Tstg Limits 650 ±30 4* 2.
4* 16* 3 36 4.
8 300 48 0.
38 -55~+150 Unit V A mJ °C W W/°C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambie...


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