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MTP4403SQ8

CYStech Electronics
Part Number MTP4403SQ8
Manufacturer CYStech Electronics
Description P-Channel Enhancement Mode Power MOSFET
Published Jun 19, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 1/7 P-CHANN...
Datasheet PDF File MTP4403SQ8 PDF File

MTP4403SQ8
MTP4403SQ8


Overview
CYStech Electronics Corp.
Spec.
No.
: C804Q8 Issued Date : 2009.
12.
16 Revised Date : 2011.
03.
21 Page No.
: 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4403SQ8 BVDSS -20V RDSON(MAX) 46mΩ ID -6.
1A Description The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features • RDS(ON)=46mΩ@VGS=-10V, ID=-6.
1A RDS(ON)=61mΩ@VGS=-4.
5V, ID=-5A • Simple drive requirement • Low gate charge • Low voltage drive (2.
5V) • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit MTP4403SQ8 Outline SOP-8 G:Gate S:Source D:Drain Ordering Information Device MTP4403SQ8 Package SOP-8 (Pb-free lead plating package) MTP4403SQ8 Shipping 3000 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C804Q8 Issued Date : 2009.
12.
16 Revised Date : 2011.
03.
21 Page No.
: 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Continuous Drain Current, TA=70℃ (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1) VDS VGS ID ID IDM Pd Tj ; Tstg Rth,j-a -20 ±12 -6.
1 -5.
1 -60 2.
5 0.
02 -55~+150 50 V V A A A W W / °C °C °C/W Note : 1.
Surface mounted on 1 in² copper pad of FR-4 board; 125 °C/W when mounted on minimum copper pad.
2.
Pulse width limited by maximum junction temperature.
Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min.
Typ.
Max.
Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) -20 -0.
7 - - *GFS - Dynamic Ciss Coss Crss *t...



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