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MTP4435BV8

CYStech Electronics
Part Number MTP4435BV8
Manufacturer CYStech Electronics
Description P-Channel Enhancement Mode Power MOSFET
Published Jun 19, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 1/9 P-Channel Enhancem...
Datasheet PDF File MTP4435BV8 PDF File

MTP4435BV8
MTP4435BV8


Overview
CYStech Electronics Corp.
Spec.
No.
: C107V8 Issued Date : 2016.
02.
17 Revised Date : Page No.
: 1/9 P-Channel Enhancement Mode Power MOSFET MTP4435BV8 BVDSS ID@ VGS=-10V, TA=25°C ID@ VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-10A Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package RDSON@VGS=-5V, ID=-7A -30V -10.
5A -32.
4A 12.
6mΩ(typ.
) 16.
9mΩ(typ.
) Equivalent Circuit MTP4435BV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device Package Shipping MTP4435BV8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTP4435BV8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C107V8 Issued Date : 2016.
02.
17 Revised Date : Page No.
: 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=-12A, VDD=-15V Repetitive Avalanche Energy @ L=0.
05mH TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg Limits -30 ±25 -32.
4 -20.
5 -10.
5 -8.
4 -80 *1 -12 72 *4 2.
5 *2 29 12 3.
1 *3 1.
9 *3 -55~+150 Unit V A mJ W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max RθJC RθJA 4.
2 40 *3 °C/W Note : 1.
Pulse width limited by maximum junction temperature 2.
Duty cycle≤1% 3.
Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum co...


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