DatasheetsPDF.com

MTN10N60CE3

CYStech
Part Number MTN10N60CE3
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Jun 20, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C085E3 Issued Date : 2016.03.17 Revised Date : Page No. : 1/10 N-Channel Enhance...
Datasheet PDF File MTN10N60CE3 PDF File

MTN10N60CE3
MTN10N60CE3

Overview
CYStech Electronics Corp.
Spec.
No.
: C085E3 Issued Date : 2016.
03.
17 Revised Date : Page No.
: 1/10 N-Channel Enhancement Mode Power MOSFET MTN10N60CE3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=6A 600V 10A 0.
54Ω Description The MTN10N60CE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Ordering Information Device MTN10N60CE3-0-UB-X Package TO-220 (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN10N60CE3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C085E3 Issued Date : 2016.
03.
17 Revised Date : Page No.
: 2/10 Symbol MTN10N60CE3 Outline TO-220 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Current @ L=0.
1mH Single Pulse Avalanche Energy @ L=5mH, ID=9 Amps, VDD=50V (Note 3) Repetitive Avalanche Energy (Note 2) Maximum Temperature for Soldering @ Lead at 0.
063 in(1.
6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID IDM IA...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)