DatasheetsPDF.com

MTN10N65CFP

CYStech
Part Number MTN10N65CFP
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Jun 20, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C077FP Issued Date : 2016.02.04 Revised Date : 2016.03.18 Page No. : 1/10 N-Chan...
Datasheet PDF File MTN10N65CFP PDF File

MTN10N65CFP
MTN10N65CFP


Overview
CYStech Electronics Corp.
Spec.
No.
: C077FP Issued Date : 2016.
02.
04 Revised Date : 2016.
03.
18 Page No.
: 1/10 N-Channel Enhancement Mode Power MOSFET MTN10N65CFP BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=6A 650V 10A 0.
55Ω Description The MTN10N65CFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Applications • Open Framed Power Supply • Adapter • STB Ordering Information Device MTN10N65CFP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN10N65CFP CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C077FP Issued Date : 2016.
02.
04 Revised Date : 2016.
03.
18 Page No.
: 2/10 Symbol MTN10N65CFP Outline TO-220FP G:Gate D:Drain S:Source GDS Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.
125 in(0.
318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID IDM IAS EAS EAR TL PD Tj, Tstg Limits 650 ±30 10* 6.
3* 40* 10 ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)