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1MBI600U4B-120

Fuji Electric
Part Number 1MBI600U4B-120
Manufacturer Fuji Electric
Description IGBT
Published Jun 21, 2016
Detailed Description SPECIFICATION Device Name : IGBT MODULE Type Name : 1MBI600U4B-120 Spec. No. : MS5F 6062 Mar. 09 ’05 Mar. 09 ’05 ...
Datasheet PDF File 1MBI600U4B-120 PDF File

1MBI600U4B-120
1MBI600U4B-120

Overview
SPECIFICATION Device Name : IGBT MODULE Type Name : 1MBI600U4B-120 Spec.
No.
: MS5F 6062 Mar.
09 ’05 Mar.
09 ’05 S.
Miyashita T.
Miyasaka K.
Yamada Y.
Seki MS5F6062 1 13 a H04-004-07b Revised Records Date Classification Ind.
Mar.
-09 -’05 Enactment Content Applied date Drawn Checked Checked Approved Issued date T.
Miyasaka K.
Yamada Y.
Seki Oct.
-25-’05 Revision a Revised characteristics VCE(sat),VF (P4/13) S.
Miyashita O.
Ikawa K.
Yamada T.
Miyasaka MS5F6062 2 13 a H04-004-06b 1.
Outline Drawing ( Unit : mm ) 1MBI600U4B-120 2.
Equivalent circuit MS5F6062 3 13 a H04-004-03a 3.
Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified ) It em s Sym b o l s Conditions Collector-Emitter voltage Gate-Emitter voltage VCES VGES Ic Continuous Collector current Icp 1ms -Ic -Ic pulse 1ms Collector Power Dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso AC : 1min.
Screw Torque Mounting (*2) Terminals (*3) Terminals (*4) - (*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 3.
5 to 4.
5 Nm (M6) (*3) Recommendable Value : Terminals 10.
0 to 11.
0 Nm (M8) (*4) Recommendable Value : Terminals 1.
3 to 1.
7 Nm (M4) Tc=25oC Tc=80oC Tc=25oC Tc=80oC Max i m u m Ratings 1200 ±20 800 600 1600 1200 600 1200 3570 +150 -40 to +125 Units V V A W oC 2500 VAC 4.
5 11.
0 N m 1.
7 4.
Electrical characteristics ( at Tj= 25oC unless otherwise specified ) It em s Sym b o l s Conditions Characteristics min.
typ.
max.
Zero gate voltage collector current ICES VCE=1200V VGE=0V - - 8.
0 Gate-Emitter leakage current IGES VCE=0V VGE=±20V - - 1600 Gate-Emitter threshold voltage VGE(th) VCE=20V Ic=600mA 4.
5 6.
5 8.
5 VCE(sat) Ic=600A Tj=25oC - a 2.
20 a 2.
35 Collector-Emitter (terminal) VGE=15V Tj=125oC - a 2.
40 - saturation voltage VCE(sat) Tj=25oC - 1.
90 2.
05 (chip) Tj=125o...


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