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KMB4D5DN60QA

KEC
Part Number KMB4D5DN60QA
Manufacturer KEC
Description Dual N-Channel MOSFET
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching t...
Datasheet PDF File KMB4D5DN60QA PDF File

KMB4D5DN60QA
KMB4D5DN60QA

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.
It is mainly suitable for load switch and Back light inverter.
FEATURES VDSS=60V, ID=4.
5A.
Drain-Source ON Resistance.
RDS(ON)=56m (Max.
) @ VGS=10V RDS(ON)=77m (Max.
) @ VGS=4.
5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage Gate Source Voltage Drain Current DC@Ta=25 Pulsed Drain Source Diode Forward Current Drain Power Dissipation @Ta=25 Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID* IDP IS PD* Tj Tstg 60 20 4.
5 20 3 2 150 -55~150 V V A A A W Thermal Resistance, Junction to Ambient RthJA* 62.
5 /W Note> *Surface Mounted on 1” 1” FR4 Board, t 10sec.
KMB4D5DN60QA Dual N-Ch Trench MOSFET DP H T G L A 85 DIM A B1 B2 D MILLIMETERS 4.
85 +_ 0.
2 3.
94 +_ 0.
2 6.
02+_ 0.
3 0.
4 +_ 0.
1 B1 B2 G 0.
15+0.
1/-0.
05 H 1.
63 +_ 0.
2 14 L 0.
65 +_ 0.
2 P 1.
27 T 0.
20+0.
1/-0.
05 FLP-8 KMB4D5DN 60QA PIN CONNECTION (TOP VIEW) S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 1 2 3 4 8 7 6 5 2008.
5.
27 Revision No : 0 1/4 KMB4D5DN60QA ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Dynamic BVDSS IDSS IGSS Vth RDS(ON)* gfs* VGS=0V, IDS=250 A VGS=0V, VDS=48V VGS= 20V, VDS=0V VDS=VGS, ID=250 A VGS=10V, ID=4.
5A VGS=4.
5V, ID=3A VDS=5V, ID=4.
5A Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge VGS=10V VGS=4.
5V Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings Ciss* Coss* Crss* Qg* Qgs* Qgd* td(on)* tr* td(off)* tf* VDS=30V, VGS=0V, f=1MHz VDS=30V, VG...


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