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KU310N10D

KEC
Part Number KU310N10D
Manufacturer KEC
Description N-Channel MOSFET
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching...
Datasheet PDF File KU310N10D PDF File

KU310N10D
KU310N10D

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 27A Drain-Source ON Resistance : RDS(ON)=31m (Max.
) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 100 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 27 17 110* 60 2.
3 4.
5 52 0.
42 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 ~ 150 Thermal Resistance, Junction-to-Case RthJC Thermal Resistance, Junction-to-Ambient RthJA * : Drain cu...


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