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2N5551C

Part Number	2N5551C
Manufacturer	KEC
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Published	Jun 21, 2016
Detailed Description	SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Vo...
Datasheet	2N5551C PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current.
: ICBO=50nA(Max.
), VCB=120V Low Saturation Voltage : VCE(sat)=0.
2V(Max.
), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.
) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB PC Tj Tstg RATING 180 160 6 600 100 625 150 -55 150 UNIT V V V mA mA mW L M C 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS...

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