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MMBTA517

KEC
Part Number MMBTA517
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBO...
Datasheet PDF File MMBTA517 PDF File

MMBTA517
MMBTA517

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation VCBO VCEO VEBO IC PC * 40 30 10 400 350 Junction Temperature Tj 150 Storage Temperature Tstg -55 150 * : Package Mounted On 99.
5% Alumina 10 8 0.
6mm.
UNIT V V V mA mW MMBTA517 EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.
93+_ 0.
20 B 1.
30+0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 1 G 1.
90 H 0.
95 J 0.
13+0.
10/-0.
05 K 0.
00 ~ 0.
10 Q PP L 0.
55 M 0.
20 MIN N 1.
00+0.
20/-0.
10 C N K J P7 Q 0.
1 MAX M 1.
EMITTER 2.
BASE 3.
COLLECTOR SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Collector Output Capacitance Cob TEST CONDITION IC=0.
1mA IC=10mA IE=-1.
0mA VCB=40V VEB=10V IC=100mA, VCE=2V IC=100mA, IB=1mA IC=100mA, IB=10mA IC=100mA, f=100MHz, VCE=2V VCB=10V, f=1MHz MIN.
40 30 10 30K - TYP.
1.
5 220 5 MAX.
1 1 1 2 - UNIT V V V A A V V MHz pF 1999.
11.
30 Revision No : 3 1/2 MMBTA517 1999.
11.
30 Revision No : 3 2/2 ...


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