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KTX216U

KEC
Part Number KTX216U
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES Includi...
Datasheet PDF File KTX216U PDF File

KTX216U
KTX216U


Overview
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES Including two devices in US6.
(Ultra Super mini type with 6 leads.
) With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT Q1 C Q2 OUT B R1 IN Q2 R1=10KΩ R2=10KΩ R2 E COMMON EQUIVALENT CIRCUIT (TOP VIEW) 65 4 Marking 65 Type Name 4 Q1 Q2 BL 12 3 Q1 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current * Single pulse Pw=1mS.
Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Output Voltage Input Voltage Output Current Q1, Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing.
2004.
2.
28 Revision No : 0 123 SYMBOL VCBO VCEO VEBO IC ICP * SYMBOL VO VI IO SYMBOL PD * Tj Tstg A A1 CC KTX216U EPITAXIAL PLANAR NPN TRANSISTOR H B B1 1 6 DIM MILLIMETERS A 2.
00+_ 0.
20 2 5 A1 1.
3+_ 0.
1 B 2.
1+_ 0.
1 3 4 D B1 1.
25+_ 0.
1 C 0.
65 D 0.
2+0.
10/-0.
05 G 0-0.
1 H 0.
9+_ 0.
1 T T 0.
15+0.
1/-0.
05 G 1.
Q1 (EMITTER) 2.
Q1 (BASE) 3.
Q2 OUT (COLLECTOR) 4.
Q2 COMMON (EMITTER) 5.
Q2 IN (BASE) 6.
Q1 (COLLECTOR) US6 RATING 15 12 6 500 1 RATING 50 30, -10 100 RATING 200 150 -55 150 UNIT V V V UNIT V V UNIT 1/4 KTX216U Q1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage ICBO V(BR)CBO V(BR)CEO VCB=15V, IE=0 IE=10 A IC=1mA Emitter-Base Breakdown Voltage DC Current Gain V(BR)EBO hFE IE=10 A VCE=2V, IC=10mA Collector-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA Transition Frequency fT VCE=2V, IC=10mA, fT=100MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz MIN.
15 12 6 270 - TYP.
90 320 7.
5 MAX.
100 680 250 - UNIT nA V V V mV MHz pF Q2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CON...


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