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KTA2014E

KEC
Part Number KTA2014E
Manufacturer KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(...
Datasheet PDF File KTA2014E PDF File

KTA2014E
KTA2014E

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES Excellent hFE Linearity : hFE(0.
1mA)/hFE(2mA)=0.
95(Typ.
).
Low Noise : NF=1dB(Typ.
), 10dB(Max.
).
Complementary to KTC4075E.
Small Package.
KTA2014E EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current IB Collector Power Dissipation Junction Temperature PC Tj Storage Temperature Range Tstg RATING -50 -50 -5 -150 -30 100 150 -55 150 UNIT V V V mA mA mW ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=-50V, IE=0 Emitter Cut-off Current IEBO VEB=-5V, IC=0 DC Current Gain hFE (Note) VCE=-6V, IC=-2mA Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA Transition Frequency fT VCE=-10V, IC=-1mA Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Noise Figure VCE=-6V, IC=-0.
1mA NF f=1kHz, Rg=10k Note : hFE Classification O(2):70 140, Y(4):120 240, GR(6):200 400 MIN.
70 80 - TYP.
- -0.
1 4 MAX.
-0.
1 -0.
1 400 -0.
3 7 UNIT A A V MHz pF - 1.
0 10 dB 2014.
3.
31 Revision No : 1 1/3 KTA2014E 2014.
3.
31 Revision No : 1 2/3 KTA2014E 2014.
3.
31 Revision No : 1 3/3 ...


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