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KTB1151

KEC
Part Number KTB1151
Manufacturer KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PC=1.5W(...
Datasheet PDF File KTB1151 PDF File

KTB1151
KTB1151

Overview
SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PC=1.
5W(Ta=25 Complementary to KTD1691.
) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse * Base Current VCBO VCEO VEBO IC ICP IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg * PW 10ms, Duty Cycle 50% RATING -60 -60 -7 -5 -8 -1 1.
5 20 150 -55 150 UNIT V V V A A W KTB1151 EPITAXIAL PLANAR PNP TRANSISTOR A B C H J K D E F G L M N O P 12 3 1.
EMITTER 2.
COLLECTOR 3.
BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.
3 MAX 5.
8 0.
7 Φ3.
2+_ 0.
1 3.
5 11.
0 +_ 0.
3 2.
9 MAX 1.
0 MAX 1.
9 MAX 0.
75 +_ 0.
15 15.
50+_ 0.
5 2.
3 +_ 0.
1 0.
65 +_ 0.
15 1.
6 3.
4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * ICBO IEBO hFE 1 hFE2 (Note) hFE 3 VCE(sat) VBE(sat) TEST CONDITION VCB=-50V, IE=0 VEB=-7V, IC=0 VCE=-1V, IC=-0.
1A VCE=-1V, IC=-2A VCE=-2V, IC=-5A IC=-2A, IB=-0.
2A IC=-2A, IB=-0.
2A Turn On Time ton Switching Time Storage Time tstg Fall Time tf * Pulse test : PW 350 S, Duty Cycle 2% Pulse Note) hFE(2) Classification : O:160 320, Y:200 0 I B2 INPUT IB1 20µsec -IB1=IB2=0.
2A DUTY CYCLE <= 1% 400.
IB1 IB2 5Ω OUTPUT VCC =-10V MIN.
60 160 50 - - TYP.
- -0.
14 -0.
9 MAX.
-10 -10 400 -0.
3 -1.
2 UNIT A A V V 0.
15 1 - 0.
78 2.
5 S - 0.
18 1 2003.
7.
24 Revision No : 2 1/3 POWER DISSIPATION PC (W) IC DERATING dT (%) KTB1151 Pc - Ta 25 Tc=Ta INFINITE HEAT SINK 20 15 10 5 0 0 50 100 150 200 AMBIENT TEMPERATURE Ta ( C) 250 160 140 120 100 80 60 40 20 0 0 d T - TC DissipationS/LbimLiitmedited 25 50 75 100 125 150 175 200 CASE TEMPERATURE Tc ( C) SAFE OPERATING AREA -10 -5 -3 -1 IC IC ((PDuCls)eM)MAAXX.
D.
iSs/sbip2La...


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