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KTB1241

Part Number	KTB1241
Manufacturer	KEC
Description	EPITAXIAL PLANAR PNP TRANSISTOR
Published	Jun 21, 2016
Detailed Description	SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURE ᴌHigh Breakdown Voltage and High Current : VCEO=-80V, ...
Datasheet	KTB1241 PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
FEATURE ᴌHigh Breakdown Voltage and High Current : VCEO=-80V, IC=-1A.
ᴌLow VCE(sat) ᴌComplementary to KTD1863.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE PC Tj Tstg RATING -80 -80 -5 -1 1 1 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ O D KTB1241 EPITAXIAL PLANAR PNP TRANSISTOR BD G JA R P DEPTH:0.
2 C Q K FF HH M EM 123 HL NN 1.
EMITTER 2.
COLLECTOR 3.
BASE DIM MILLIMETERS A 7.
20 MAX B 5.
20 MAX S C 0.
60 MAX D 2.
50 MAX E 1.
15 ...

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