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KTB817

KEC
Part Number KTB817
Manufacturer KEC
Description TRIPLE DIFFUSED PNP TRANSISTOR
Published Jun 22, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD1047. Recommended for 60W Au...
Datasheet PDF File KTB817 PDF File

KTB817
KTB817

Overview
SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION.
FEATURES Complementary to KTD1047.
Recommended for 60W Audio Frequency Amplifier Output Stage.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -160 -140 -6 -12 -15 100 150 -55 150 UNIT V V V A W E KTB817 TRIPLE DIFFUSED PNP TRANSISTOR AQ B K F I J GH C D d PP 1 23 1.
BASE L DIM MILLIMETERS A 15.
9 MAX B 4.
8 MAX C 20.
0+_ 0.
3 D 2.
0+_ 0.
3 d 1.
0+0.
3/-0.
25 E 2.
0 F 1.
0 G 3.
3 MAX H 9.
0 I 4.
5 T MJ 2.
0 K 1.
8 MAX L 20.
5+_ 0.
5 M 2.
8 P 5.
45+_ 0.
2 Q Φ3.
2+_ 0.
2 T 0.
6+0.
3/-0.
1 2.
COLLECTOR (HEAT SINK) 3.
EMITTER TO-3P(N) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO DC Current Gain hFE (1) (Note) hFE 2 Coll...


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