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HY3210M

HOOYI
Part Number HY3210M
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Jun 22, 2016
Detailed Description HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged ...
Datasheet PDF File HY3210M PDF File

HY3210M
HY3210M

Overview
HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.
8 mΩ (typ.
) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems.
DS G TO-3PS-3L D DS G TO-3PS-3M G N-Channel MOSFET Ordering and Marking Information S P HY3210 YYÿ XXXJWW G PS HY3210 YYÿ XXXJWW G M HY3210 YYÿ XXXJWW G PM HY3210 YYÿ XXXJWW G B HY3210 YYÿ XXXJWW G Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PS-3M M : TO-220FB-3M PS: TO-3PS-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-fre...


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