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2N1470

Inchange Semiconductor
Part Number 2N1470
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jun 22, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N1470 DESCRIPTION ·Excellent Safe O...
Datasheet PDF File 2N1470 PDF File

2N1470
2N1470

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N1470 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC = 1.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) APPLICATIONS ·Designed for general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 60 V 60 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 3 PC Collector Power Dissipation@TC=25℃ 55 A W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N1470 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.
5A; IB= 0.
15A VBE(sat) Base-Emitter Saturation Voltage IC= 1.
5A; IB= 0.
15A VBE(on) Base-Emitter On Voltage IC= 1.
5A; VCE= 5V ICEO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 60V; IB= 0 VCE= 60V; VBE= -1.
5V VCE= 60V; VBE= -1.
5V; TC= 150℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 1A; VCE= 5V IC= 3A; VCE= 5V MIN MAX UNIT 60 V 60 V 1.
0 V 1.
5 V 1.
5 V 0.
1 mA 0.
1 2.
0 mA 1.
0 mA 15 5 isc website：www.
iscsemi.
cn 2 ...


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