DatasheetsPDF.com

2SA1214

Inchange Semiconductor
Part Number 2SA1214
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Jun 22, 2016
Detailed Description isc Silicon PNP Power Transistor 2SA1214 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good ...
Datasheet PDF File 2SA1214 PDF File

2SA1214
2SA1214

Overview
isc Silicon PNP Power Transistor 2SA1214 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 1.
5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1214 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.
1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.
1A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.
1A ICBO Collector Cutoff Current VCB= -60V; IE= 0 -1.
0 V -1.
5 V -1.
0 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.
0 μA hFE DC Current Gain IC= -150mA; VCE= -2V 60 320 fT Current-Gain—Bandwidth Product IC= -100mA; VCE= -10V 35 MHz COB Output Capacitance IE= 0; VCB= -10V; f= 1.
0MHz 45 pF NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or med...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)