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MBNP2026G6

Part Number	MBNP2026G6
Manufacturer	CYStech Electronics
Description	N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device
Published	Jun 23, 2016
Detailed Description	CYStech Electronics Corp. Spec. No. : C197G6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/10 N- Channel Enhanc...
Datasheet	MBNP2026G6 PDF File

Overview

CYStech Electronics Corp.
Spec.
No.
: C197G6 Issued Date : 2011.
01.
20 Revised Date : Page No.
: 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2026G6 Description The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • Pb-free package Equivalent Circuit MBNP2026G6 Outline TSOP-6 C2 S1 D1 G：Gate B : Base S：Source E : Emitter D：Drain C : Collector B2 E2 G1 MBNP2026G6 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C197G6 Issued Date : 2011.
01.
20 Revised Date : Page No.
: 2/10 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Collector Current(DC) (Note 1) Peak Collector Current (Note 2) Peak Base Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS VCBO VCEO VEBO ID IDM IC ICM IBM Pd Tj, Tstg Rth,ja Limits N-channel PNP 30 ±12 -40 -30 -5 100 400 -3 -5 -500 1.
3 0.
01 -55~+150 110 Unit V V V V V mA mA A A mA W W / °C °C °C/W Note : 1.
Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad 2.
Pulse width limited by maximum junction temperature N-Channel MOSFET Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min.
Typ.
Max.
Unit Test Conditions Static BVDSS 30 - - V VGS=0, ID=100μA VGS(th) 0.
8 1.
3 1.
5 V VDS=3V, ID=100μA ...

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MBNP2026G6 N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device - CYStech Electronics

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