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2SC3582

Inchange Semiconductor
Part Number 2SC3582
Manufacturer Inchange Semiconductor
Description Silicon NPN RF Transistor
Published Jun 23, 2016
Detailed Description isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3582 DESCRIPTION ·Low Noise Figure, High Gain, and High Curren...
Datasheet PDF File 2SC3582 PDF File

2SC3582
2SC3582


Overview
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3582 DESCRIPTION ·Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity.
·Low Noise and High Gain NF = 1.
2 dB TYP.
@f = 1.
0 GHz Ga = 12 dB TYP.
@f = 1.
0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.
5 V IC Collector Current-Continuous PC Collector Power Dissipation @T...



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