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2SC3583

Part Number	2SC3583
Manufacturer	Inchange Semiconductor
Description	Silicon NPN RF Transistor
Published	Jun 23, 2016
Detailed Description	isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise and High Gain NF = 1.2 dB TYP., Ga = 11 dB TYP. @VCE = 8 V, IC = 7...
Datasheet	2SC3583 PDF File

Overview

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise and High Gain NF = 1.
2 dB TYP.
, Ga = 11 dB TYP.
@VCE = 8 V, IC = 7 mA, f = 1.
0 GHz ·High Power Gain MAG = 15dB TYP.
@VCE = 8V, IC = 20 mA, f = 1.
0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.
5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 65 mA 200 mW 150 ℃ Tstg Storage Temperature Range ...

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