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2SC3856-P

Inchange Semiconductor
Part Number 2SC3856-P
Manufacturer Inchange Semiconductor
Description Silicon NPN Transistor
Published Jun 23, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3856-P DESCRIPTION ·High Collecto...
Datasheet PDF File 2SC3856-P PDF File

2SC3856-P
2SC3856-P

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3856-P DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3856-P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.
0A; IB= 0.
5A ICBO Collector Cutoff Current VCB= 200V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain COB Output Capacitance fT Current-Gain—Bandwidth Product Switching times IC= 3A ; VCE= 4V IE= 0 ; VCB= 10V;ftest= 1.
0MHz IE=-0.
5A ; VCE= 12V ton Turn-on Time tstg Storage Time tf Fall Time IC= 10A ,RL= 4Ω, IB1= -IB2= 1A,VCC= 40V MIN TYP.
MAX UNIT 180 V 2.
0 V 100 μA 100 μA 70 140 300 pF 20 MHz 0.
5 μs 1.
8 μs 0.
6 μs isc Website：www.
iscsemi.
cn 2 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3856 isc Website：www.
iscsemi.
cn ...


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