DatasheetsPDF.com

CNY17F-1

QT Optoelectronics
Part Number CNY17F-1
Manufacturer QT Optoelectronics
Description 6-PIN DIP OPTOCOUPLERS
Published Mar 23, 2005
Detailed Description 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS (NO BASE CONNECTION) DESCRIPTION The CNY17F series consists of a Ga...
Datasheet PDF File CNY17F-1 PDF File

CNY17F-1
CNY17F-1

Overview
6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS (NO BASE CONNECTION) DESCRIPTION The CNY17F series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor CNY17F-1 (CTR = 40%-80%) FEATURES • • • • High isolation voltage 5300 VAC RMS-1 minute, 7500 VAC PEAK-1 minute High BVCEO minimum 70 volts Maximum switching time in saturation specified Underwriters Laboratory (UL) recognized file #E90700 CNY17F-2 (CTR = 63%-125%) CNY17F-3 (CTR = 100%-200%) APPLICATIONS • • • • • Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls CNY17F-4 (CTR = 160%-320%) ABSOLUTE MAXIMUM RATINGS Rating EMITTER Forward Current - Continuous Forward Current - Peak (PW = 1µs, 300pps) Reverse Voltage LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range Storage Temperature Range Lead Soldering Temperature (1/16” from case, 10 sec.
duration) (TA =25°C Unless otherwise specified) Symbol IF IF(pk) VR PD Value 90 3.
0 6 135 1.
8 200 2.
67 PD TA Tstg TL 260 3.
5 -55 to +100 -55 to +150 260 Unit mA A Volts mW mW/°C mW mW/°C 1 6 1 6 1 6 1 PD SCHEMATIC NC 6 mW mW/°C °C °C °C 3 NC 4 2 5 PIN 1.
ANODE 2.
CATHODE 3.
NO CONNECTION 4.
EMITTER 5.
COLLECTOR 6.
NO CONNECTION NOTE 1.
Input-Output Isolation Voltage,VISO, is an internal device dielectric breakdown rating.
7/17/00 200027B CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.
) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Forward Voltage Temp.
Coefficient Reverse Voltage Junction Capacitance Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Capacitance (IR = 10 µA) (VF = 0 V, f = 1 MHz) (VF = 1 V, f = 1 MHz) (VR = 3.
0 V) (IC...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)