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HBNP54S6

Cystech Electonics
Part Number HBNP54S6
Manufacturer Cystech Electonics
Description General Purpose NPN / PNP Epitaxial Planar Transistors
Published Jun 24, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C904S6 Issued Date : 2013.10.21 Revised Date : 2015.09.03 Page No. : 1/9 General...
Datasheet PDF File HBNP54S6 PDF File

HBNP54S6
HBNP54S6

Overview
CYStech Electronics Corp.
Spec.
No.
: C904S6 Issued Date : 2013.
10.
21 Revised Date : 2015.
09.
03 Page No.
: 1/9 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP54S6 Features • Includes a BTC3906 chip and BTA1514 chip in a SOT-363 package.
• Mounting possible with SOT-323 automatic mounting machines.
• Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
• Pb-free lead plating package.
Equivalent Circuit HBNP54S6 Outline SOT-363 Ordering Information Device HBNP54S6-0-T1-G Package SOT-363 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name HBNP54S6 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C904S6 Issued Date : 2013.
10.
21 Revised Date : 2015.
09.
03 Page No.
: 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) TR2 (PNP) 180 -160 160 -160 6 -6 600 -600 200(total) *1 150 -55~+150 Note: *1 150mW per element must not be exceeded.
Unit V V V mA mW °C °C Characteristics (Ta=25°C) •Q1, TR1 (NPN) Symbol Min.
BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 fT Cob 180 160 6 100 120 40 100 - Typ.
0.
1 - Max.
50 50 0.
15 0.
2 0.
9 1.
0 270 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=180V VEB=6V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% HBNP54S6 CYStek Product Specification ...


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