DatasheetsPDF.com

HDBLS101G

Taiwan Semiconductor
Part Number HDBLS101G
Manufacturer Taiwan Semiconductor
Description Glass Passivated High Efficient Bridge Rectifiers
Published Jun 24, 2016
Detailed Description HDBLS101G - HDBLS107G Taiwan Semiconductor CREAT BY ART 1A, 50V - 1000V Glass Passivated High Efficient Bridge Rectifier...
Datasheet PDF File HDBLS101G PDF File

HDBLS101G
HDBLS101G

Overview
HDBLS101G - HDBLS107G Taiwan Semiconductor CREAT BY ART 1A, 50V - 1000V Glass Passivated High Efficient Bridge Rectifiers FEATURES - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326854 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: Molded plastic body Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no.
with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Polarity as marked on the body Weight: 0.
36 g (approximately) DBLS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER HDBLS HDBLS HDBLS HDBLS HDBLS HDBLS HDBLS SYMBOL 101G 102G 103G 104G 105G 106G 107G Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Maximum average forward rectified current IF(AV) 1 Peak forward surge current, 8.
3 ms single half sine-wave superimposed on rated load IFSM 50 Rating for fusing (t<8.
3ms) I2t 10.
3 Maximum instantaneous forward voltage (Note 1) IF= 1 A VF 1.
0 1.
3 1.
7 Maximum reverse current @ rated VR TJ=25°C TJ=125°C Maximum reverse recovery time (Note 2) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Pulse Test with PW=300μs,1% Duty Cycle IR trr RθJL RθJA TJ TSTG 5 500 50 15 40 - 55 to +150 - 55 to +150 75 Note 2: Reverse Recovery Test Conditions: IF=0.
5A, IR=1.
0A, IRR=0.
25A UNIT V V V A A A2s V μA ns °C/W °C °C Document Number: DS_D1310040 Version: F15 HDBLS101G - HDBLS107G Taiwan Semiconductor ORDERIN...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)