DatasheetsPDF.com

2SD1171

Part Number	2SD1171
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 24, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1171 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Mi...
Datasheet	2SD1171 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1171 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.
0V(Max.
)@ IC= 2.
0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC...

Similar Datasheet

2SD110 Silicon NPN Power Transistor - Inchange Semiconductor Company
2SD1101 NPN TRANSISTOR - Hitachi Semiconductor
2SD1101 Silicon NPN Transistor - Guangdong Kexin Industrial
2SD1101 Silicon NPN Transistor - Renesas
2SD1105 Silicon NPN Power Transistor - Inchange Semiconductor Company
2SD111 Silicon NPN Power Transistor - INCHANGE
2SD1110 NPN Transistor - INCHANGE
2SD1110 SILICON POWER TRANSISTOR - SavantIC
2SD1111 NPN TRANSISTOR - Sanyo Semicon Device
2SD1113 Silicon NPN Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)