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2SD1173

Inchange Semiconductor
Part Number 2SD1173
Manufacturer Inchange Semiconductor
Description Silicon NPN Transistor
Published Jun 24, 2016
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1173 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Mi...
Datasheet PDF File 2SD1173 PDF File

2SD1173
2SD1173


Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1173 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.
0V(Max.
)@ IC= 3.
0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 4 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 6 A 70 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1173 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.
0A; IB= 1.
0A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Base Cutoff Current hFE DC Current Gain IC= 3.
0A; IB= 1.
0A VCB=750V; IE= 0 VCB=1500V; IE= 0 IC= 3A; VCE= 10V 4.
0 V 1.
5 V 50 uA 1 mA 6 20 VECF C-E Diode Forward Voltage IF= 4A 2.
5 V Switching Times tstg Storage Time tf Fall Time IC = 3A,IB1 = IB2= 1A 10 μs 0.
8 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace in...



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