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GAP05SLT80-CAL

Part Number	GAP05SLT80-CAL
Manufacturer	GeneSiC
Description	Silicon Carbide Power Schottky Diode
Published	Jun 25, 2016
Detailed Description	Silicon Carbide Power Schottky Diode Features  8000 V Silicon Carbide Schottky rectifier  175 °C maximum operating tem...
Datasheet	GAP05SLT80-CAL PDF File

Overview

Silicon Carbide Power Schottky Diode Features  8000 V Silicon Carbide Schottky rectifier  175 °C maximum operating temperature  Positive temperature coefficient of VF  Extremely fast switching speeds  Superior figure of merit QC/IF Advantages  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Low reverse recovery current  Low device capacitance  Low reverse leakage current at operating temperature Die Datasheet GAP05SLT80-CAL VRRM IF QC = 8000 V = 50 mA = 8 nC Die Size = 2.
4 mm x 2.
4 mm Applications  Down Hole Oil Drilling, Geothermal Instrumentation  High Voltage Mul...

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GAP05SLT80-CAL Silicon Carbide Power Schottky Diode - GeneSiC

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