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BDY13-6

Inchange Semiconductor
Part Number BDY13-6
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jun 26, 2016
Detailed Description isc Silicon NPN Power Transistor BDY13-6 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Coll...
Datasheet PDF File BDY13-6 PDF File

BDY13-6
BDY13-6


Overview
isc Silicon NPN Power Transistor BDY13-6 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.
) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1V(Max)@ IC = 3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current 0.
3 A PC Collector Power Dissipation@TC=45℃ 26 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY13-6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 100uA; IE= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
3A 1 V VBE(sat) Base-Emitter Saturation Voltage IC=3A; IB= 0.
3A 1.
3 V ICES Collector Cutoff Current VCE= 60V; VBE= 0 1.
0 uA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.
0 uA hFE1 DC Current Gain IC= 0.
01A; VCE= 1V 55 hFE2 DC Current Gain IC= 1A; VCE= 1V 40 63 100 hFE3 DC Current Gain IC= 3A; VCE= 2V 40 fT Current Gain-Bandwidth Product IC= 0.
2A; VCE= 10V; f=20MHz 30 MHz Switching Times ton Turn-On Time IC= 1A; IB= 50mA 0.
3 μs toff Turn-Off Time IC= 1A; IB1= 50mA; 1.
5 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
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