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BUK446-800B

Inchange Semiconductor
Part Number BUK446-800B
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jun 26, 2016
Detailed Description isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-...
Datasheet PDF File BUK446-800B PDF File

BUK446-800B
BUK446-800B

Overview
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK446-800A ID Current-continuous @ TC=25℃ BUK446-800B Ptot Total Dissipation@TC=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 800 V ±30 V 2.
0 A 1.
7 30 W 150 ℃ 150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.
16 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W BUK446-800A/B isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUK446-800A/B ·ELECTRICAL CHARACT...


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