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BUY57

Part Number	BUY57
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 26, 2016
Detailed Description	isc Silicon NPN Power Transistor BUY57 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 125V(Min.) ·Low C...
Datasheet	BUY57 PDF File

Overview

isc Silicon NPN Power Transistor BUY57 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 125V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= 1.
3V@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCES Collector-Emitter Voltage 150 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @TC≤25℃...

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