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HFD630A

SemiHow
Part Number HFD630A
Manufacturer SemiHow
Description 200V N-Channel MOSFET
Published Jun 27, 2016
Detailed Description HFD630A_HFU630A August 2015 HFD630A / HFU630A 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 9.0 A FE...
Datasheet PDF File HFD630A PDF File

HFD630A
HFD630A

Overview
HFD630A_HFU630A August 2015 HFD630A / HFU630A 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 9.
0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630A 1 2 3 HFU630A 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25୅) Power Dissipation (TC = 25୅) - Derate above 25୅ 200 9.
0 * 5.
7 * 36 * ρ30 232 9.
0 9.
...


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