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5SNA0800N330100

ABB
Part Number 5SNA0800N330100
Manufacturer ABB
Description IGBT Module
Published Jun 27, 2016
Detailed Description VCE = IC = 3300 V 800 A ABB HiPakTM IGBT Module 5SNA 0800N330100 • Low-loss, rugged SPT chip-set • Smooth switching S...
Datasheet PDF File 5SNA0800N330100 PDF File

5SNA0800N330100
5SNA0800N330100

Overview
VCE = IC = 3300 V 800 A ABB HiPakTM IGBT Module 5SNA 0800N330100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Doc.
No.
5SYA 1591-00 Jan 07 Maximum rated values 1) Parameter Symbol Conditions min Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C DC collector current IC Tc = 80 °C Peak collector current ICM tp = 1 ms, Tc = 80 °C Gate-emitter voltage VGES -20 Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) DC forward current IF Peak forward current Surge current IGBT short circuit SOA IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave tpsc VCC = 2500 V, VCEMCHIP ≤ 3300 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 Case temperature Tc -40 Storage temperature Tstg -4...


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