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DX10N60F

Dexin Chip
Part Number DX10N60F
Manufacturer Dexin Chip
Description N-Channel MOSFET
Published Jun 28, 2016
Detailed Description DX10N60R/DX10N60F N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanc...
Datasheet PDF File DX10N60F PDF File

DX10N60F
DX10N60F

Overview
DX10N60R/DX10N60F N-Channel MOSFET 600V, 10A, 0.
7Ω General Description These N-channel MOSFET are produced using advanced DeXin’s MOSFET Technology, which provides low on- state resistance,rugged avalanche, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features  VDS = 600V  VDS = 660V @ Tjmax  ID = 10A @ VGS = 10V  RDS(ON) ≤ 0.
7Ω @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220 DX F Series TO-220F DX Series Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) TC=25oC TC=100oC TC=25oC Derate above 25 oC Junction and Storage Temperature Range * Id limited by maximum junction temperature Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg G S MDP10N60G MDF10N60G 600 660 ±30 10 10* 6.
3 6.
3* 40 40* 156 48 1.
25 0.
38 15.
6 4.
5 520 -55~150 ` Unit V V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Jun.
2010 Version 1.
2 Symbol RθJA RθJC MDP10N60G 62.
5 0.
8 MDF10N60G 62.
5 2.
6 Unit oC/W 1 www.
dexinchip.
com Ordering Information Part Number DX10N60R DX10N60F Temp.
Range -55~150oC -55~150oC Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen Free Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reve...


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