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SSPR46N03

SeCoS
Part Number SSPR46N03
Manufacturer SeCoS
Description N-Channel Enhancement Mode Power MOSFET
Published Jul 3, 2016
Detailed Description Elektronische Bauelemente SSPR46N03 46A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Pr...
Datasheet PDF File SSPR46N03 PDF File

SSPR46N03
SSPR46N03

Overview
Elektronische Bauelemente SSPR46N03 46A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSRS46N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SPR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
SPR-8PP FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 46N03 = Date code PACKAGE INFORMATION Package MPQ SPR-8PP 3K Leader Size 13 inch REF.
A B C D E F Millimeter Min.
Max.
3.
25 3.
40 3.
05 3.
25 3.
20 3.
40 3.
00 3.
20 0.
65 BSC.
2.
40 2.
60 REF.
G H I J K L Millimeter Min.
Max.
1.
35 1.
55 0.
24 0.
35 1.
13 REF.
0.
30 0.
50 0.
10 0.
20 0.
70 0.
90 SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current 1@VGS=10V TC=100°C TA=25°C Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 TA=70°C VDS VGS ID IDM EAS 30 ±20 46 29 11 8.
7 92 130 Avalanche Current Power Dissipation 4 TA=25°C IAS PD 34 29 Operating Junction & Storage Temperature TJ, TSTG 55~150 Thermal Resistance Rating Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA RθJC 75 4.
31 Unit V V A A mJ A W °C °C / W °C / W http://www.
SeCoSGmbH.
com/ 18-Apr-2014 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SSPR46N03 46A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID= 250µA Gate-Threshold Voltage VGS(th) 1 - 2.
5 V VDS=VGS, ID=250µA Gate-Source...


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