DatasheetsPDF.com

BAV756DW

JCET
Part Number BAV756DW
Manufacturer JCET
Description Switching Diode
Published Jul 3, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAV756DW SWITCHING DIODE FEATURE...
Datasheet PDF File BAV756DW PDF File

BAV756DW
BAV756DW


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-363 Plastic-Encapsulate Diodes BAV756DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KCA KCA KCA Solid dot = Pin1 indicate.
Solid dot = Green molding compound device, if none,the normal device.
SOT-363 65 4 1 23 Maximum Ratings @Ta=25℃ Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @ t = 8.
3ms Power Dissipation Thermal Resistance From Junction to Ambient Operating Junction Temperature Storage Temperature Symbol VRRM VRWM VR IFM IO IFSM PD RθJA TJ TSTG Limit 75 300 150 2 200 625 150 -55~+150 Unit V mA mA A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Total capacitance Reveres recovery time www.
cj-elec.
com Symbol V(BR) IR VF Ctot trr Test conditions IR= 2.
5µA VR=75V VR=20V IF=1mA IF=10mA IF=50mA IF=150mA VR=0, f=1MHz IF=IR=10mA,Irr=0.
1×IR, RL=100Ω 1 Min 75 Max 2.
5 0.
025 715 855 1000 1250 2 4 Unit V µA mV pF ns C,Mar,2016 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D FORWARD CURRENT I (mA) F T a =100℃ Typical Characteristics Forward Characteristics 300 100 10 1 0.
0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1.
4 1.
6 FORWARD VOLTAGE V (V) F Capacitance Characteristics 1.
1 T =25℃ a f=1MHz 1.
0 0.
9 0.
8 0.
7 0.
6 0 4 8 12 16 20 REVERSE VOLTAGE V (V) R T a =25℃ REVERSE CURRENT I (nA) R 10000 1000 Reverse Characteristics T =100℃ a 100 T =25℃ a 10 1 0 250 20 40 60 80 REVERSE VOLTAGE V (V) R Power Derating Curve 100 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T (℃) a www.
cj-elec.
com 2 C,Mar,2016 SOT-363 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)