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DIM1200ASM45-TS001

Dynex
Part Number DIM1200ASM45-TS001
Manufacturer Dynex
Description Single Switch IGBT
Published Jul 4, 2016
Detailed Description Replaces DS6107-8 DIM1200ASM45-TS001 Single Switch IGBT Module DS6107-9 August 2023 (LN42733) FEATURES • 10.2kV Isolat...
Datasheet PDF File DIM1200ASM45-TS001 PDF File

DIM1200ASM45-TS001
DIM1200ASM45-TS001


Overview
Replaces DS6107-8 DIM1200ASM45-TS001 Single Switch IGBT Module DS6107-9 August 2023 (LN42733) FEATURES • 10.
2kV Isolation • 10µs Short Circuit Withstand • High Thermal Cycling Capability • High Current Density Enhanced DMOS SPT • Isolated AlSiC Base With AlN Substrates • Lead Free Construction APPLICATIONS • High Reliability Inverters • Motor Controllers • Traction Drives • Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM1200ASM45-TS001 is a single switch 4500V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.
This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 4500V 2.
5V 1200A 2400A * Measured at the auxiliary terminals 9(C) 7(C) 5(C) 3(C) 2(G) 1(E) 8(E) 6(E) 4(E) Fig.
1 Circuit configuration ORDERING INFORMATION Order As: DIM1200ASM45-TS001 Note: When ordering, please use the complete part number Outline type code: A (See Fig.
11 for further information) Fig.
2 Package Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures 1/8 www.
dynexsemi.
com DIM1200ASM45-TS001 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect de...


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