DatasheetsPDF.com

DIM1600FSM12-A000

Dynex
Part Number DIM1600FSM12-A000
Manufacturer Dynex
Description Single Switch IGBT Module
Published Jul 4, 2016
Detailed Description Replaces DS5533-3.1 DIM1600FSM12-A000 Single Switch IGBT Module DS5533-4 October 2010 (LN27611) FEATURES  10µs Short ...
Datasheet PDF File DIM1600FSM12-A000 PDF File

DIM1600FSM12-A000
DIM1600FSM12-A000

Overview
Replaces DS5533-3.
1 DIM1600FSM12-A000 Single Switch IGBT Module DS5533-4 October 2010 (LN27611) FEATURES  10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon  Isolated AlSiC Base with AlN Substrates  Lead Free construction APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM1600FSM12-A000 is a single switch 1200V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.
This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 1200V 2.
2V 1600A 3200A * Measured at the power busbars, not the auxiliary terminals 7(C) 9(G) 1(C) 2(C) 8(E) 3(E) 4(E) Fig.
1 Circuit configuration ORDERING INFORMATION Order As: DIM1600FSM12-A000 Note: When ordering, please use the complete part number Outline type code: F (See Fig.
11 for further information) Fig.
2 Package Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures www.
dynexsemi.
com 1/8 DIM1600FSM12-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless st...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)