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DIM1600FSS12-A000

Part Number	DIM1600FSS12-A000
Manufacturer	Dynex
Description	Single Switch IGBT
Published	Jul 4, 2016
Detailed Description	Replaces DS5541-3 DIM1600FSS12-A000 Single Switch IGBT Module DS5541-4 July 2014 (LN31768) FEATURES  10µs Short Circu...
Datasheet	DIM1600FSS12-A000 PDF File

Overview

Replaces DS5541-3 DIM1600FSS12-A000 Single Switch IGBT Module DS5541-4 July 2014 (LN31768) FEATURES  10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates  Lead Free construction KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 1200V 2.
2V 1600A 3200A * Measured at the power busbars, not the auxiliary terminals APPLICATIONS  High Power Inverters  Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM1600FSS12-A000 is a single switch 1200V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.
This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
1(C) 2(C) 7(C) 9(G) 8(E) 3(E) 4(E) Fig.
1 Circuit configuration ORDERING INFORMATION Order As: DIM1600FSS12-A000 Note: When ordering, please use the complete part number Outline type code: F (See Fig.
11 for further information) Fig.
2 Package Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures 1/8 www.
dynexsemi.
com DIM1600FSS12-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise Symbol Parameter VCES VGES IC IC(PK) P...

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