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DIM500XSM65-TS000

Dynex
Part Number DIM500XSM65-TS000
Manufacturer Dynex
Description Single-Switch IGBT
Published Jul 4, 2016
Detailed Description Replaces DS6173-3 Preliminary Information DIM500XSM65-TS000 Single Switch IGBT Module DS6173-4 August 2017 (LN34635) F...
Datasheet PDF File DIM500XSM65-TS000 PDF File

DIM500XSM65-TS000
DIM500XSM65-TS000


Overview
Replaces DS6173-3 Preliminary Information DIM500XSM65-TS000 Single Switch IGBT Module DS6173-4 August 2017 (LN34635) FEATURES  10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon  Isolated AlSiC Base With AlN Substrates  Lead Free Construction KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 6500V 2.
8V 500A 1000A * Measured at the auxiliary terminals APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction Drives  Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM500XSM65-TS000 is a single switch 6500V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.
This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
7(C) 5(C) 3(C) 2(G) 1(E) 6(E) 4(E) Fig.
1 Circuit configuration ORDERING INFORMATION Order As: DIM500XSM65-TS000 Note: When ordering, please use the complete part number Outline type code: X (See Fig.
11 for further information) Fig.
2 Package Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures 1/8 www.
dynexsemi.
com DIM500XSM65-TS000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tca...



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