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FM25V10

Cypress Semiconductor
Part Number FM25V10
Manufacturer Cypress Semiconductor
Description 1Mb Serial 3V F-RAM Memory
Published Jul 4, 2016
Detailed Description FM25V10 1-Mbit (128K × 8) Serial (SPI) F-RAM 1-Mbit (128K × 8) Serial (SPI) F-RAM Features ■ 1-Mbit ferroelectric rando...
Datasheet PDF File FM25V10 PDF File

FM25V10
FM25V10

Overview
FM25V10 1-Mbit (128K × 8) Serial (SPI) F-RAM 1-Mbit (128K × 8) Serial (SPI) F-RAM Features ■ 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See Data Retention and Endurance on page 16) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast serial peripheral interface (SPI) ❐ Up to 40-MHz frequency ❐ Direct hardware replacement for serial flash and EEPROM ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1) ■ Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array ■ Device ID and Serial Number ❐ Manufacturer ID and Product ID ❐ Unique Serial Number (FM25VN10) ■ Low power consumption ❐ 300 A active current at 1 MHz ❐ 90 A (typ) standby current ❐ 5 A sleep mode current ■ Low-voltage operation: VDD = 2.
0 V to 3.
6 V ■ Industrial temperature: –40 C to +85 C ■ Packages ❐ 8-pin small outline integrated circuit (SOIC) package ❐ 8-pin dual flat no-leads (DFN) package ■ Restriction of hazardous substances (RoHS) compliant Logic Block Diagram WP CS HOLD SCK Instruction Decoder Clock Generator Control Logic Write Protect Functional Description The FM25V10 is a 1-Mbit nonvolatile memory employing an advanced ferroelectric process.
A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM.
It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.
Unlike serial flash and EEPROM, the FM25V10 performs write operations at bus speed.
No write delays are incurred.
Data is written to the memory array immediately after each byte is successfully transferred to the device.
The next bus cycle can commence without the need ...


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