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UMN1N

JCET
Part Number UMN1N
Manufacturer JCET
Description SWITCHING DIODE
Published Jul 5, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes UMN1N SWITCHING DIODE SOT-353 F...
Datasheet PDF File UMN1N PDF File

UMN1N
UMN1N

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-353 Plastic-Encapsulate Diodes UMN1N SWITCHING DIODE SOT-353 FEATURES  Multiple Diodes in One Small Surface Mount Package  Diode Characteristics are Matched in the Package APPLICATIONS  High Speed Switching MARKING: N1 ++ + + N1 N1 +-+ +-+ Solid dot = Green molding compound device, if none,the normal device.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VR Continuous Reverse Voltage IO Continuous Forward Current IFM Peak Forward Current IFSM Non-repetitive Peak Forward Surge Current@t= 8 .
3 m s PD Power Dissipation RθJA Thermal Resistance From Junction To Ambient TJ Junction Temperature Tstg Storage Temperature Value 80 25 80 0.
25 150 833 150 -55~+150 Unit V mA mA A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Symbol V(BR) Test conditions IR=100μA Min Typ Max 80 Reverse current IR VR=70V 0.
1 Forward voltage Total capacitan...


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