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CMPSH-3

RECTRON
Part Number CMPSH-3
Manufacturer RECTRON
Description SCHOTTKY DIODE
Published Jul 7, 2016
Detailed Description RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 PLASTIC-ENCAPSULATE SCHOTTKY DIODE CMPSH-3 FEATURES * Power dissi...
Datasheet PDF File CMPSH-3 PDF File

CMPSH-3
CMPSH-3

Overview
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 PLASTIC-ENCAPSULATE SCHOTTKY DIODE CMPSH-3 FEATURES * Power dissipation PD: 350 mW (Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.
008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Reverse Breakdown Voltage (IR=100mA) Reverse voltage leakage current (VR=25V) Reverse voltage leakage current (VR=25V, TA= 100oC) Forward voltage (IF=2mA) Forward voltage (IF=15mA) Forward voltage (IF=100mA) SYMBOL V(BR) IR VF Diode capacitance (VR=0V, f=1MHz) Reverse recovery time (IF=IR=10mA, IRR=1.
0mA, RL=100W) Ctot trr Marking Note 1: "Fully RO...


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