DatasheetsPDF.com

B2020W

JCET
Part Number B2020W
Manufacturer JCET
Description SCHOTTKY BARRIER DIODE
Published Jul 7, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes B2020W SCHOTTKY BARRIER DIODE FEA...
Datasheet PDF File B2020W PDF File

B2020W
B2020W


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOD-123 Plastic-Encapsulate Diodes B2020W SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Very Small SMD Package APPLICATIONS z Low Voltage Rectification z High Efficiency DC/DC Conversion z Switch Mode Power Supply z Inverse Polarity Protection z Low Power Consumption Applications MARKING: SH SOD-123 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value VRRM VRWM VR(RMS) IF IFSM PD Peak Repetitive Reverse Voltage Working Peak Reverse Voltage RMS Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Surge Current @ t=8.
3ms Power Dissipation Note1 Note2 20 14 2 9 300 670 RΘJA Thermal Resistance from Junction to Ambient Note1 Note2 333 149 Tj Junction Temperature 125 Tstg Storage Temperature -55~+150 1:Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2:Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
Unit V V A A mW mW ℃/W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse current Symbol V(BR) IR Forward voltage Total capacitance *Pulse test: tp ≤ 300 μs; δ ≤ 0.
02.
VF* Ctot Test conditions IR=1mA VR=10V VR=20V IF=1A IF=2A VR=4V,f=1MHz Min Typ Max 20 80 100 0.
45 0.
55 120 Unit V μA V pF www.
cj-elec.
com 1 D,Mar,2015 Typical Characteristics Forward Characteristics 2 1 oC =100 oC T a =25 FORWARD CURRENT I (A) F T a 0.
1 0.
01 0 100 200 300 400 500 FORWARD VOLTAGE V (mV) F 600 REVERSE CURRENT I (mA) R Reverse Characteristics 10 1 T =100 oC a 0.
1 T =25 oC a 0.
01 1E-3 0 5 10 15 20 25 REVERSE VOLTAGE V (V) R 30 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Characteristics 300 T =25℃ a f=1MHz 250 200 150 100 50 0 0 5 10 15 20 REVERSE VOLTAGE V ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)