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Si2304BDS

Vishay
Part Number Si2304BDS
Manufacturer Vishay
Description N-channel MOSFET
Published Jul 8, 2016
Detailed Description N-Channel 30 V (D-S) MOSFET Si2304BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.070 at VGS = 10 V 0....
Datasheet PDF File Si2304BDS PDF File

Si2304BDS
Si2304BDS

Overview
N-Channel 30 V (D-S) MOSFET Si2304BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.
070 at VGS = 10 V 0.
105 at VGS = 4.
5 V ID (A) 3.
2 2.
6 Qg (Typ.
) 2.
6 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View Si2304BDS (L4)* * Marking Code Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 3.
2 2.
6 2.
5 2.
1 Pulsed Drain Current IDM 10 Continuous Source Current (Diode Conduction)a, b IS 0.
9 0.
62 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 1.
08 0.
69 0.
75 0.
48 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t5s Steady State Maximum Junction-to-Foot (Drain) Steady State Notes: a.
Surface mounted on FR4 board, t  5 s.
b.
Pulse width limited by maximum junction temperature.
c.
Surface mounted on FR4 board.
Symbol RthJA RthJF Typical 90 130 60 For SPICE model information via the Worldwide Web: http://www.
vishay.
com/www/product/spice.
htm Maximum 115 166 75 Unit V A W °C Unit °C/W Document Number: 72503 www.
vishay.
com S11-1908-Rev.
E, 26-Sep-11 1 This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 Si2304BDS Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea RDS(on...


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